许思维, 王训四, 沈祥. 结合高分辨率X射线光电子能谱和拉曼散射研究GexGa8S92–x玻璃结构[J]. 仁和官网, 2023, 72(1): 017101. DOI: 10.7498/aps.72.20221653
引用本文: 许思维, 王训四, 沈祥. 结合高分辨率X射线光电子能谱和拉曼散射研究GexGa8S92–x玻璃结构[J]. 仁和官网, 2023, 72(1): 017101. DOI: 10.7498/aps.72.20221653
Xu Si-Wei, Wang Xun-Si, Shen Xiang. Structure of GexGa8S92–x glasses studied by high-resolution X-ray photoelectron spectroscopy and Raman scattering[J]. rhhz, 2023, 72(1): 017101. DOI: 10.7498/aps.72.20221653
Citation: Xu Si-Wei, Wang Xun-Si, Shen Xiang. Structure of GexGa8S92–x glasses studied by high-resolution X-ray photoelectron spectroscopy and Raman scattering[J]. rhhz, 2023, 72(1): 017101. DOI: 10.7498/aps.72.20221653

结合高分辨率X射线光电子能谱和拉曼散射研究GexGa8S92–x玻璃结构

Structure of GexGa8S92–x glasses studied by high-resolution X-ray photoelectron spectroscopy and Raman scattering

  • 摘要: 本文在固定Ga原子含量为8%的情况下, 结合高分辨率X射线光电子能谱和拉曼散射光谱对硫系玻璃GexGa8S92–x(x = 24%, 26.67%, 29.6%, 32%和36%)的结构进行了研究. 通过分析玻璃结构中各单元结构的演变情况, 发现玻璃内部网络结构主要为S原子桥接GeS4和GaS4四面体结构. 随着Ge含量的逐渐增大, S链状或环状结构单元迅速减少, 并消失于Ge26.67Ga8S65.33玻璃组分中; 而类乙烷结构S3Ge-GeS3中的Ge—Ge同极键和S3Ge/Ga-Ga/GeS3结构中的MM(Ge—Ge, Ga—Ga或Ge—Ga)同极键同时出现于Ge29.6Ga8S62.4玻璃中, 并且其结构数量随着Ge含量的增大而逐渐增加. 由此可以判定, 首先, 在硫系玻璃GexGa8S92–x结构中Ge和Ga原子均主要以4配位的形式出现, 而S原子则主要以2配位的形式出现. 其次, MM键的存在导致纳米相分离, 玻璃网络结构的有序化程度降低.

     

    Abstract: In this paper, the structures of chalcogenide glasses GexGa8S92–x (x = 24%, 26.67%, 29.6%, 32% and 36%) at a fixed Ga atomic content of 8% are studied by high-resolution X-ray photoelectron spectroscopy and Raman scattering spectra. In order to quantify the evolutions of the different structural units in GexGa8S92–x glasses, the number of double peaks in the Ge 3d, Ga 3d and S 2p spectra are determined by iterative fitting method, the binding energy and the full width at half maximum of each peak, and the relative ratio of the integral area of each decomposed peak to that of the whole area of the X-ray photoelectron spectroscopy are thus achieved. On the other hand, the Raman scattering spectra of GexGa8S92–x glass are decomposed into multiple Gaussians based on the structural units. We use the iterative method to simulate the position of peak center, full width at half maximum, and height of each Raman peak. By analyzing the evolution of each unit structure in the glasses, it is found that the network structure of glass network is mainly formed by S atom bridging the tetrahedral structure of GeS4 and GaS4. The S chains or rings structural units are formed in Ge24Ga8S68 glass, indicating that S atoms are in excess in the chemical composition of the glass, so there are enough S atoms around Ge and Ga atoms, forming heteropolar Ge—S and Ga—S bonds. With the gradual increase of Ge content, S chains or rings structure units rapidly disappear in Ge26.67Ga8S65.33 glass. The Ge—Ge homopolar bonds in the ethane-like structure S3Ge—GeS3 and the MM (Ge—Ge, Ga—Ga or Ge—Ga) homopolar bonds in the S3Ge/Ga—Ga/GeS3 structure simultaneous appear in the Ge29.6Ga8S62.4 glass, and the number of structures increases gradually with the increase of Ge content. This is mainly due to the insufficient number of S atoms in the Ge-Ga-S glass. Once S atoms are lacking, the excess Ge and Ga atoms can only combine with themselves to form the homopolar bond MM. It can be concluded below. Firstly, Ge and Ga atoms appear mainly in the form of 4-coordination, while S atoms occur mainly in the form of 2-coordination in the chalcogenide glasses of GexGa8S92–x. Secondly, the existence of MM bond leads the nanophase to separate, and the ordering degree of glass network structure to decrease .

     

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