LIU W J, WANG H, NAN J C. Design of reconfigurable dual-band radio frequency power amplifier based on PIN switch[J]. Chinese journal of radio science,2022,37(1):168-174. (in Chinese). DOI: 10.12265/j.cjors.2020273.
Citation:
LIU W J, WANG H, NAN J C. Design of reconfigurable dual-band radio frequency power amplifier based on PIN switch[J]. Chinese journal of radio science,2022,37(1):168-174. (in Chinese). DOI: 10.12265/j.cjors.2020273.
LIU W J, WANG H, NAN J C. Design of reconfigurable dual-band radio frequency power amplifier based on PIN switch[J]. Chinese journal of radio science,2022,37(1):168-174. (in Chinese). DOI: 10.12265/j.cjors.2020273.
Citation:
LIU W J, WANG H, NAN J C. Design of reconfigurable dual-band radio frequency power amplifier based on PIN switch[J]. Chinese journal of radio science,2022,37(1):168-174. (in Chinese). DOI: 10.12265/j.cjors.2020273.
In order to meet the demand for power amplifiers in multi-standard and multi-mode systems in 5G communications, a new reconfigurable dual-band matching circuit structure is proposed. First, a distributed PIN switch is added to the output matching network. Disconnect the two dual-band output matching circuits to achieve good matching; then, the broadband input matching network designed based on the theory of band-pass filters can achieve good matching in the 1.5 GHz−2.5 GHz frequency band. To verify the effectiveness of the method, we used CGH40010F GaN transistor, designed and processed a reconfigurable dual-band power amplifier working at 1.6 GHz & 2.1 GHz, 1.8 GHz & 2.3 GHz. The actual measurement results show that the power added efficiency of the reconfigurable dual-band power amplifier (power added efficiency, PAE) are greater than 46.2%, and the saturated output power is greater than 39.09 dBm. The power amplifier has the characteristics of circuit complexity and low design difficulty, and each band has high output power and power added efficiency, which provides a feasible solution for design reconfigurable power amplifiers.